Statistical and corner modeling of interconnect resistance and capacitance

Abstract

We describe an innovative and comprehensive interconnect spice model for IBM 65 nm technology. The model links the variability in the model to the variations in BEOL litho, deposition, etch, and polish process steps, which is an industry first. It provides correct Monte Carlo simulation results, offers correct corner modeling capability, and can also generates a set of optimal interconnect corner models instantly without running Monte Carlo simulations, which is another industry first. © 2006 IEEE.