Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Tungsten gate metal-oxide-semiconductor capacitors formed by 6.5 nm ofthermal SiO2 and 150 nm of sputtered tungsten have been characterized. The gate metal was deposited using high argon pressure (55 mTorr) to obtain a deposit with a low residual internal stress. To avoid tungsten oxidation and to remove the oxide damage caused by the sputtering deposition process, thermal treatments (500°C ≤ T ≤ 800°C) were performed in a silicide oxygen-free furnace. The electrical characterization has shown the efficacy of the low temperature anneal and the onset of gate oxide degradation on treatments at T ≥ 700°C. There is experimental evidence that this degradation can be attributed, at least partially, to the oxygen depletion that characterizes the environment inside the silicide anneal furnace. © 1990 Elsevier Sequoia S.A.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
David B. Mitzi
Journal of Materials Chemistry
Mark W. Dowley
Solid State Communications