Conference paper
PBTI under dynamic stress: From a single defect point of view
K. Zhao, J.H. Stathis, et al.
IRPS 2011
Conference paper
Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)
Abstract
This publication presents photon emission measurements of SiGe acquired with Si-CCD and InGaAs detector, proving the InGaAs-camera capability for this application. The emission characteristic helps distinguish operating modes like saturation, active or avalanche. Spectral response shows a local maximum at 1300 nm, representing the decreased bandgap due to additional germanium. © 2011 IEEE.