J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Paper
Some electrical properties of the semiconductor βGa2O3
Abstract
The wide-band gap semiconductor βGa2O3 has an electron mobility of the order of 100 cm2/V-sec at room temperature. Single crystals grown under reducing conditions have about 2 × 1018 free carriers, apparently due to anion vacancies. © 1967.
Related
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Revanth Kodoru, Atanu Saha, et al.
arXiv
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids