A.A. Onton, M.R. Lorenz, et al.
Journal of Crystal Growth
Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes. © 1966 The American Institute of Physics.
A.A. Onton, M.R. Lorenz, et al.
Journal of Crystal Growth
C.W. Wilmsen, P.D. Kirchner, et al.
Journal of Applied Physics
J. Woodall, H.J. Hovrl
Journal of Crystal Growth
J.A. Silberman, T.J. De Lyon, et al.
Applied Physics Letters