J.A. Mandelman, J. Alsmeier
IEEE Electron Device Letters
Conference paper
SOI MOSFET mismatch due to floating-body effects
Abstract
The effect of transient operation of cross-coupled partially-depleted SOI NMOSFETs on the mismatch of device electrical characteristics is investigated with FIELDAY device modeling. Selective use of novel `body-equilibrium links' allows closely matched electrical characteristics within groups of devices without seriously degrading the performance advantages of SOI.
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