D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Floating body effects in partially-depleted silicon-on-insulator (SOI) field effect transistors leads to variation in the threshold voltage. This, in turn, gives rise to variations in drain current depending on bias conditions and device history. A method was developed to measure drain currents and full I-V curves for single pulses. This technique allows the device characteristics of any one of a series of pulses to be obtained, thus, accounting for the effect of the prior activity of a device on its output.
D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
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