Single-photon detectors for ultra-low-voltage time-resolved emission measurements of VLSI circuits

Abstract

Using Time Resolved Emission (TRE) to measure electrical signals inside VLSI CMOS circuits in a non-invasive fashion is a very powerful technique. However, node scaling and the related supply voltage reduction have created significant challenges. In this paper, we investigate the limits of established and prototype single photon detectors for future low voltage applications. In particular the performances of a state of the art InGaAs Single Photon Avalanche Photodiode (SPAD) and Superconducting Single-Photon Detector (SSPD) are reported and compared for low voltage applications using test vehicles fabricated in IBM 65 nm and 45 nm SOI technologies. © 2011 SPIE.