Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The atomic arrangements in amorphous germanium and silicon are simulated by means of a computer program. In this treatment a disordered system of 64 atoms in a cubic box with periodic boundary conditions is taken as the initial configuration. Each atom is considered in turn and the four nearest and twelve second-nearest neighbors are moved radially towards the nearest and next nearest neighbor distances. The resulting radial distribution function is in good agreement with experiment. © 1972.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Mark W. Dowley
Solid State Communications