Reliability challenges with ultra-low k interlevel dielectrics
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
A simple physical model is applied to time-dependent dielectric breakdown failure in ultralow- k (k=2.3) interlevel dielectrics. The model assumes that failure depends on the probability that an electron will have enough energy to damage the dielectric as it is accelerated in an electric field. It is seen that the characteristic form of the dependence of failure time on voltage or electric field is primarily dependent on the probability of having sufficient energy and not on the precise physical mechanism causing damage. An argument for a log-normal-like failure distribution is also presented. © 2005 American Institute of Physics.
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
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