Silicon-on-Insulator Technology by Heteroepitaxial Growth of Fluorides

Abstract

Progress in the growth and fabrication of silicon -on- insulator (SOI) structures, based on heteroepitaxial growth of CaF2 films on silicon, is reviewed. This approach has led to prototype SOI structures, such as MOSFETS, with promising performance. The combination of silicide and fluoride heteroepitaxy on silicon may lead eventually to multiple level SOI device structures. © 1986, SPIE.