Silicon charge electrode array for ink jet printing

Abstract

A monolithic charge electrode array suitable for use in a multiple channel ink jet printing apparatus has been fabricated by anisotropic etching of trapezoidal slots through a (110) oriented silicon substrate. Each electrode in the array is a three-dimensional p-n diode formed by p+ diffusion of the surface and sidewalls of the etched slots. Electrical isolation between adjacent electrodes is achieved by appropriate biasing of the diodes. The devices are passivated by a layer of thermally grown SiO2. Printing has been demonstrated with a short array. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.