Conference paper
Energy Distribution of Interface Traps in High-K Gated MOSFETs
J.-P. Han, E.M. Vogel, et al.
VLSI Technology 2003
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
J.-P. Han, E.M. Vogel, et al.
VLSI Technology 2003
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