Maneesha Rupakula, Junrui Zhang, et al.
ESSDERC 2019
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
Maneesha Rupakula, Junrui Zhang, et al.
ESSDERC 2019
Stefan Abel, Thilo Stöferle, et al.
ECOC 2015
Tommaso Stecconi, Roberto Guido, et al.
Advanced Electronic Materials
Lukas Czornomaz, N. Daix, et al.
ESSDERC 2013