Conference paper
On-chip circuit for monitoring frequency degradation due to NBTI
Kevin Stawiasz, Keith A. Jenkins, et al.
IRPS 2008
Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Different device geometries and operating conditions are evaluated and compared.
Kevin Stawiasz, Keith A. Jenkins, et al.
IRPS 2008
Franco Stellari, Peilin Song, et al.
IEEE ITC 2009
Alan J. Weger, Jamil Wakil, et al.
ITherm 2012
Damon B. Farmer, Hsin-Ying Chiu, et al.
Nano Letters