Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements

Self-heating of FinFET devices is a reliability concern, especially for large devices with dense arrays on SOI. In this paper, we leverage the Picosecond time resolution of Time-Resolved Emission (TRE) measurements to quantitatively measure the modulation of the off-state leakage current due to self-heating in individual FinFETs fabricated in SOI technology. This provides the first direct measurement of the self-heating from individual FinFET devices.