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Applied Physics Letters
Paper

Selective desorption of interfacial SiO2

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Abstract

The selective thermal decomposition of silica from a silicate/silicon (001) interface without silicidation of the dielectric was reported. The electrical characteristics of silicate/silicon interfaces were studied. The intriguing consequence of the relative stability of metal-oxide compounds was discussed. It was shown that after initial silicate formation excess of interfacial silica is decomposed.

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Applied Physics Letters

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