Michiel Sprik
Journal of Physics Condensed Matter
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability. © 2010 The Electrochemical Society.
Michiel Sprik
Journal of Physics Condensed Matter
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011