M. Matsuura, R. Petkie, et al.
Materials Science and Engineering: A
Alloys of Gd-Pt and Gd-V, both Gd-rich and Pt or V-rich, have been prepared by coevaporation onto n- and p-type Si for Schottky contact formation. Structural and electrical properties of these contacts after various heat treatments have been studied by combining x-ray diffraction, backscattering spectroscopy, and current-voltage measurement. We found that these alloys produced a mixture of silicides on Si; i.e., they formed parallel contacts of GdSi2 and PtSi or GdSi2 and VSi2 to Si. We also found that the sum of apparent Schottky barrier heights of these parallel contacts on n-Si and p-Si is not necessarily equal to the value of the band gap of Si, which we recall is always true for a single phase contact.
M. Matsuura, R. Petkie, et al.
Materials Science and Engineering: A
B.Y. Tsaur, J.W. Mayer, et al.
Journal of Applied Physics
P.A. Psaras, R.D. Thompson, et al.
Journal of Applied Physics
H. Föll, P.S. Ho, et al.
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties