S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Peter J. Price
Surface Science
Ronald Troutman
Synthetic Metals