Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
This paper presents Schottky barrier diode circuits fully integrated in a 0.13-μm SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of externai components. The upconverter has a size of 430 × 780 μm2 including on-chip matching elements and bond pads. It has a conversion gain of -6 to -7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of -4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of -6 dBm. The frequency doubler has a size of 360 × 500 μm2 and can deliver up to 2.5 dBm at 110 GHz. © 2008 IEEE.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules