Roughening and lower critical dimension in the random-field ising model

G. Grinstein; Shang-Keng Ma

doi:10.1103/PhysRevLett.49.685

Physical Review Letters

Paper

30 Aug 1982

Roughening and lower critical dimension in the random-field ising model

View publication

Abstract

It is argued on the basis of a new interface model that the lower critical dimension of random-field Ising systems is two, in agreement with simple domain estimates. © 1982 The American Physical Society.

Paper

Surface tension, roughening, and lower critical dimension in the random-field Ising model

G. Grinstein, Shang-Keng Ma

Physical Review B

Paper

Critical Behavior of Systems with Many Absorbing States

M.A. Muñoz, G. Grinstein, et al.

Physical Review Letters

Paper

Awschalom et al. reply [3]

David D. Awschalom, Joseph F. Smyth, et al.

Physical Review Letters

Paper

Grinstein and toner respond [1]

G. Grinstein, John Toner

Physical Review Letters

View all publications

Abstract

Related

Surface tension, roughening, and lower critical dimension in the random-field Ising model

Critical Behavior of Systems with Many Absorbing States

Awschalom et al. reply [3]

Grinstein and toner respond [1]