About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Conference paper
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
Abstract
Robust ultrathin (20 nm) trilayer low k SiNx/SiNy/SiCNH dielectric Cu caps (k ∼4.0-4.2) with post ultraviolet (UV) cure compressive stress were developed and integrated into 22nm CMOS Back End Of Line (BEOL) devices. The new cap reduces device's capacitance (∼ 4%) and enhances stress stability in Cu-Ultra low k structures. ©The Electrochemical Society.