Review of inductively coupled plasmas for plasma processing

Abstract

The need for large-area, high-density plasma sources for plasma-aided manufacturing of integrated circuits has created a renewed interest in inductively coupled plasmas (ICPs). Several ICP reactor geometries are briefly reviewed. Typically, inductive coupling of RF power (0.5-28 MHz) can produce ion densities in excess of 1012 cm-3 even at submillitorr pressures. Existing electromagnetic field models of ICPs are examined and found to be in reasonable agreement with experimental results. Sputter deposition, anodic silicon oxidation and polymer etching using ICPs are also described. It is concluded that ICPs are promising candidates for meeting the future requirements of plasma processing, although considerable process development, plasma characterization and modelling are still needed.