PaperAnalysis of the superhyperfine structure and the g tensor of defects in amorphous siliconJ.H. StathisPhysical Review B
PaperWorn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirrorJ. Martín-Martínez, R. Rodríguez, et al.Microelectronics Reliability
Conference paperBreakdown measurements of ultra-thin SiO2 at low voltageJ.H. Stathis, A. Vayshenker, et al.VLSI Technology 2000