PaperUltimate limit for defect generation in ultra-thin silicon dioxideD.J. DiMaria, J.H. StathisApplied Physics Letters
Conference paperCritical Assessment of Soft Breakdown Stability Time and the Implementation of New Post-Breakdown Methodology for ultra-thin gate oxidesE. Wu, J. Suñé, et al.IEDM 2003
PaperAnode hole injection, defect generation, and breakdown in ultrathin silicon dioxide filmsD.J. DiMaria, J.H. StathisJournal of Applied Physics
PaperInterface state capture cross section measurements on vacuum annealed and radiation damaged Si:SiO2 surfacesM.J. Uren, V. Nayar, et al.JES