J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Paper
Resonant tunneling via localized states in thin MOS structures
Abstract
MOSFET samples were fabricated with Na+ ions in the gate oxide. Large peaks in the tunneling conductivity through the oxide were observed which are interpreted as resonant tunneling of electrons via the localized Na+ impurities. The localized sites are believed to arise from Na+ decoration of intrinsic defects in the oxide. © 1986.
Related
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024