Resonant tunneling via Landau levels in GaAs-Ga1-xAlxAs heterostructures

Abstract

We have calculated, within the effective-mass approximation, the current-voltage characteristics for resonant tunneling through a Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 Aiš40 Aiš100 Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena. © 1988 The American Physical Society.