Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
The low-temperature (T=1.4 K) tunneling current of GaSb-AlSb-InAs-AlSb-GaSb heterostructures has shown sharp negative-differential-resistance features induced by a magnetic field parallel to the current. In addition, the zero-voltage tunneling conductance vanished at certain fields, in close analogy with the behavior of the in-plane conductance in the quantum-Hall-effect regime. These results, which strongly differ from similar experiments in GaAs-Ga1-xAlxAs resonant-tunneling diodes, are explained in terms of resonant interband tunneling of GaSb holes through Landau levels in the conduction band of the InAs quantum well. © 1991 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
John G. Long, Peter C. Searson, et al.
JES
Mark W. Dowley
Solid State Communications
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting