M.I. Nathan, T.N. Morgan, et al.
Physical Review
Oscillatory current-voltage characteristics of n+-GaAs/semi- insulating Al0.8Ga0.2As/nGaAs heterojunction barriers (400 Å thick) grown by molecular beam epitaxy on n+-GaAs (100) substrates are observed at 4 K when the heterostructures are placed under the transverse uniaxial stress along 〈011〉 direction (perpendicular to current direction) above 4 kbar. We attribute these oscillations to the resonant indirect Fowler-Nordheim tunneling via 〈011〉 oriented transverse X valleys, where the change of wave vector is required for tunneling.
M.I. Nathan, T.N. Morgan, et al.
Physical Review
S.S. Lu, K.R. Lee, et al.
Journal of Applied Physics
G. Burns, M.I. Nathan
Proceedings of the IEEE
M. Heiblum, M.I. Nathan, et al.
Surface Science