F. Chen, J. Gill, et al.
IRPS 2004
We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.
F. Chen, J. Gill, et al.
IRPS 2004
D. Edelstein, R.B. Romney, et al.
Review of Scientific Instruments
Chih-Chao Yang, Fen Chen, et al.
IITC 2012
J.L. Hurd, K.P. Rodbell, et al.
Applied Physics Letters