Relation of schottky barriers to empty surface states on III-V semiconductors

Abstract

We report new evidence that intrinsic surface states play a predominant role in determining Schottky-barrier energies for III-V semiconductors. Namely, empty surfacestate levels have been measured (using photoelectron yield spectroscopy) for (110) GaSb, GaAs, GaP, InSb, and InAs whose one-electron energies correlate with Schottky-barrier energies reported by Mead and Spitzer. Also, these sharp molecularlike surface states are shown to be insensitive to metal overlayers and to be cation derived. © 1975 The American Physical Society.