Whip antenna design for portable rf systems
Saila Ponnapalli, F.J. Canora
Photonics East 1995
A low-temperature MBE-grown buffer layer has been used to reduce backgating in GaAs/AlGaAs semiconductor-insulator-semiconductor FET’s (SISFET’s). Comparison with a control wafer having no low-temperature buffer (LTB) reveals an improvement in backgating threshold voltage by a factor of 3, improvement in output conductance and short-channel characteristics, and no significant change in threshold voltage, threshold-voltage spread, and microwave characteristics. The FET’s with LTB exhibited increased sensitivity, at 80 K, to trapping of hot electrons. © 1991 IEEE
Saila Ponnapalli, F.J. Canora
Photonics East 1995
A.J. KleinOsowski, Phil Oldiges, et al.
IEEE TNS
Boris Laikhtman, Paul M. Solomon
Physical Review B - CMMP
David J. Frank, Paul M. Solomon, et al.
IEEE T-ED