Recent progress of Phase Change Memory (PCM) and resistive switching Random Access Memory (RRAM)

Abstract

The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM. © 2011 IEEE.