Low-current spin transfer torque MRAM
D.C. Worledge, A. Annunziata, et al.
INTERMAG 2015
Spin-torque Magnetoresistive Random Access Memory (ST-MRAM) is the subject of intense investigation since it extends MRAM technology to densities beyond those achieved with the earlier field-switched MRAM technology. This paper reviews recent developments in ST-MRAM MTJ device technology, including exciting progress in scaling MTJs down to dimensions approaching 20 nm. Fabrication issues relevant to development of ST-MRAM, including its integration with CMOS back-end-of-line (BEOL) processing, are also briefly discussed. © The Electrochemical Society.
D.C. Worledge, A. Annunziata, et al.
INTERMAG 2015
J.Z. Sun, M.C. Gaidis, et al.
Applied Physics Letters
D.C. Worledge, G. Hu, et al.
Applied Physics Letters
Jonathan Z. Sun, S.L. Brown, et al.
Physical Review B - CMMP