REACTIVE ION ETCHING OF Al(Cu) ALLOYS.

Abstract

Reactive ion etching of Al( less than equivalent to 4 wt. % Cu) and Al(Cu)/W films is described. Using single layer resist, 1 mu m lines are demonstrated over 0. 3 mu m topography in the bilayer films and 0. 5 mu m lines in the single layer films over planar surfaces. For Al alloys with Cu concentration in the ranges 2-4 wt. % it is found that clean etching is strongly dependent on deposition condition. A model is proposed to explain this.