Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
T.N. Morgan
Semiconductor Science and Technology