David B. Mitzi
Journal of Materials Chemistry
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.
David B. Mitzi
Journal of Materials Chemistry
Hiroshi Ito, Reinhold Schwalm
JES
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter