P.C. Pattnaik, D.M. Newns
Physical Review B
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.
P.C. Pattnaik, D.M. Newns
Physical Review B
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials