Random telegraph signals and noise behaviors in carbon nanotube transistors

Abstract

A random telegraph signal appears at a smaller absolute gate bias for a larger absolute drain-source bias in a carbon nanotube transistor. Its mechanism is attributed to a defect located in the drain side of the Schottky barrier carbon nanotube transistor with TiAu as contact material. Furthermore, room temperature random telegraph signal is presented for both semiconducting and metallic carbon nanotubes, indicating the need to include random telegraph signal as a noise source for carbon nanotube transistors. © 2006 American Institute of Physics.