FinFET SRAM design
Rajiv Joshi, Keunwoo Kim, et al.
VLSID/Embedded 2010
In this brief, the random-dopant-fluctuation (RDF) effects in FinFET devices are investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, particularly FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an ideally "undoped"silicon channel, the existence of unintended impurity dopants of acceptors and donors will still have a significant impact on device characteristics. The implication from RDF for design is also discussed. © 2007 IEEE.
Rajiv Joshi, Keunwoo Kim, et al.
VLSID/Embedded 2010
Keunwoo Kim, Jente B. Kuang, et al.
IEEE International SOI Conference 2008
Satish Kumar, Rajiv V. Joshi, et al.
IEDM 2006
Rajiv V. Joshi, Keunwoo Kim, et al.
IEEE Transactions on VLSI Systems