J.C. Tsang, Ph. Avouris, et al.
Journal of Electron Spectroscopy and Related Phenomena
Paper
Raman spectroscopy of CySi1-y alloys grown by molecular beam epitaxy
Abstract
Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1-y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y<2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm-1.
Related
J.E. Smith Jr., J.C. Tsang, et al.
Solid State Communications
J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
J.C. Tsang, M.W. Shafer
Solid State Communications