Raman scattering in the depletion region of GaAs

Abstract

We have obtained spectra for the LO phonon mode by Raman scattering associated with surface quantization of the hole states in the depletion layer of highly doped n-type GaAs samples. When semi-transparent metal contacts are employed, the zone-center LO peak shifts to higher frequency due to plasmon-phonon interaction. The observed effects are not sensitive to the types of metal. The presence of the plasmon mode is thought to be due to the steady-state carrier injection from the incident laser light. The position of the peak is used to estimate the surface recombination rate of the excited electron-hole pairs. © 1974.