Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
UHV cleaved GaAs(110) surfaces were irradiated by unmonochromatized UV - radiation from gas discharge sources and by X-rays. A band bending up to 0.6 eV was observed after irradiation with He II, Ne II and Mg Kα, whereas no such effect occurred after He I and Ne I irradiation. The band bending increases with time to a saturation level that depends on the irradiation intensity. The effect occurred for n- and p-type samples with different doping materials and concentrations. © 1989.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Kigook Song, Robert D. Miller, et al.
Macromolecules
Mark W. Dowley
Solid State Communications
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.