Michael S. Gordon, Kenneth P. Rodbell, et al.
IEEE TNS
The use of state-of-the-art microelectronic devices in space radiation environments faces new challenges with the adoption of low dielectric constant (low-k) materials as interlevel dielectrics. This is demonstrated in a preliminary study of methyl-silsesquioxane low-k films. We report radiation damage, induced by a 2-kev low- current.density (∼ 2 × 106 s-1cm-2) positron beam, and observed by positron annihilation spectroscopy.
Michael S. Gordon, Kenneth P. Rodbell, et al.
IEEE TNS
James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS
Mihail P. Petkov, Marc H. Weer, et al.
Applied Physics Letters
Cyril Cabral Jr., Benjamin Fletcher, et al.
ADMETA 2010