Pulsed proton beam annealing: Semiconductors and silicides

Abstract

The processing of materials using an intense pulsed beam of ions is described, and some applications are reviewed. The technique offers prospective advantages of flexibility, uniformity of treatment, and precise control of energy deposition profile, compared with conventional pulsed laser or electron beam annealing techniques. Experimental results are presented showing several distinct stages in the annealing of arsenic-implanted silicon, using a 400 ns pulse of 280 keV protons at energy densities ranging up to 3 J/cm2. Examples of epitaxial regrowth and the growth of metal silicide films are also given. The technique not only has potential value for semiconductor processing, but it also constitutes a versatile tool for studying the intrinsic mechanism of pulsed energy beam annealing. © 1981.