Properties of the electron-hole condensate in Ge double-injection diodes. II

Abstract

The recombination spectra at 4.2°K from three different electrically excited, double-injection structures are compared and contrasted with the spectra obtained by laser excitation of pure Ge and Li-doped Ge. The spectrum from the mesa-type p-i-n is found to be similar to that observed by laser excitation of Li-doped Ge. The spectra obtained by electrical injection of the other p-i-n structures, which were fabricated to minimize the quantity of Li contained in the device, were found to exhibit the same spectral features as those obtained from pure Ge. These facts lead us to conclude that features of recombination spectrum of the electron-hole condensate do not depend on the method of excitation but do depend on the impurity content of the Ge. © 1976 The American Physical Society.