William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We report low-temperature magnetotransport measurements under hydrostatic pressure (up to 1.2 GPa) on a GaSb-InAs-GaSb double heterostructure. At ambient pressure the sample shows mixed conduction by electrons and holes. Pressure induces a decrease in the carrier concentrations which leads to a semimetal-semiconductor transition. In the semiconductor regime, xx(B) and xy(B) curves show the normal behavior expected for one-carrier two-dimensional conduction, while in the semimetallic case this behavior is altered by the partial compensation of the system. © 1987 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
P. Alnot, D.J. Auerbach, et al.
Surface Science
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics