Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Smiconducting single crystals of GaAs with resistivities ranging between 0.5. and 103 Ω-cm have been obtained by heat treating high purity, semi-insulating GaAs grown in the presence of Ga2O in a quartz system. The presence of Ga2O vapor during growth reduces Si contamination, and the subsequent heat treatment apparently removes unidentified acceptors from the lattice. © 1966.
Imran Nasim, Melanie Weber
SCML 2024
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta