Potential Si atomic layer epitaxy processes using halogenated Si precursors

Abstract

Potential methods for atomic layer epitaxy growth of Si using halogenated silane precursors are discussed. One method uses alternating exposures of Si2H6 and Si2Cl6. This method deposits "new" Si (Si*) on Si(100) as demonstrated through the attenuation of a boron "marker" layer. Another method uses self-terminating adsorption of SiClH3 or SiCl2H2 at about 500°C, followed by exposure to atomic H. Only the initial adsorption step of this method is studied here. © 1993.