Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The dielectric properties are reported for nanoporous thin films of poly(methyl silsesquioxane) (MSSQ) for use as an ultralow, dielectric intermetal insulator. Direct experimental conformation is provided that the films have low dielectric constants with low loss up to 10 GHz. Low-frequency measurements are also reported.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting