Plasma preparations of amorphous silicon films

Abstract

A review is given of two plasma methods for the preparation of hydrogenated amorphous silicon films. The two methods, silane glow discharge decomposition and argon-hydrogen reactive sputtering, are compared. The principal differences in electronic properties between hydrogenated and "pure" amorphous silicon are summarized. Spectroscopic characterizations of hydrogen in amorphous silicon are discussed. Some of the present problems in the understanding of the plasma deposition processes and of the role of hydrogen in amorphous silicon are pointed out. © 1978.