Publication
Applied Physics Letters
Paper

Picosecond laser sputtering of sapphire at 266 nm

View publication

Abstract

We observe that 266 nm laser pulses of 30 ps duration and fluence near 10 J/cm2 causes reproducible surface sputtering and etching of crystalline sapphire in air. The etching rate for the initial ten pulses is relatively slow, 0.04 μm/pulse, producing a smooth surface of the etched area and a broad-angle plume emission. After some 20 pulses, the etching rate is dramatically faster, 0.5 μm/pulse, producing a rough etched surface and a plume composed of broad-angle emission as well as a narrow perpendicular jet emission. Micron-sized depressions can be made on the sapphire with no visible damage or cracking to the surroundings.

Date

Publication

Applied Physics Letters

Authors

Share